aluminum induced crystallization of amorphous silicon

Study on amorphous silicon thin film by aluminum

Study on amorphous silicon thin film by aluminum-induced crystallization Minghua Li, Yong Liu,Yanghuan Lin, Xiaofeng Guo, Ruijiang Hong, Hui Shen* Institute for Solar Energy Systems, Sun Yat-Sen University, Guangzhou510006, China Abstract

Investigation of aluminum

Investigation of aluminum-induced crystallization of amorphous silicon and crystal properties of the silicon film for polycrystalline silicon solar cell fabrication 다결정 실리콘 태양전지 제조를 위한 비정절 실리콘의 알루미늄 유도 결정화 공정 및 결정특성 연구

Controlled aluminum

Aluminum-induced crystallization (AIC) of amorphous silicon with an Al 2 O 3 diffusion barrier was investigated for controlling Si crystallization and preventing layer exchange during the annealing process. An Al 2 O 3 layer was deposited between the a-Si and the Al films (a-Si/Al 2 O 3 /Al/Glass) and was blasted with an air spray gun with alumina beads to form diffusion channels between the

Aluminium Induced Crystallization of Amorphous

In this paper, aluminum induced crystallization (AIC) was studied by examining the effect of using solution derived AlCl3 catalyst. Such catalyst preparation method offers possibility of low-cost, non-vacuum solution process and allows examination of the role of

Metal Induced Crystallization

Metal Induced Crystallization 463 oxide interface layer, depending on the layer sequence, to allow the inter diffusion of the materials. The Si oxide layer is transformed by the Al into a mixture of Al oxide and an Al xSi phase. This newly formed Al xSi phase provides a diffusion ch annel for the Si and Al atoms

A Study of Silicon Crystallization Dependence upon Silicon Thickness in Aluminum

aluminum. Annealing was done below the eutectic temperature of aluminum and silicon(577 oC). Afterward, amorphous silicon layer is crystallized by aluminum-inducing process. In this paper, we report amorphous silicon layer thickness effects to crystallized

Aluminum induced crystallization of amorphous silicon:

Aluminum induced crystallization of amorphous silicon: Microstructural and crystallographic investigations Several experiments have been performed to evaluate the nucleation, growth, structure and microstructure of aluminum induced catalytically activated

(PDF) Aluminum

Aluminum-induced crystallization of amorphous silicon on glass substrates above and below the eutectic temperature Linda Koschier IntroductionThe preparation of large-grained polycrystalline silicon (poly-Si) films on low-temperature substrates has been a challenge over decades.

Study on amorphous silicon thin film by aluminum

Study on amorphous silicon thin film by aluminum-induced crystallization Minghua Li, Yong Liu,Yanghuan Lin, Xiaofeng Guo, Ruijiang Hong, Hui Shen* Institute for Solar Energy Systems, Sun Yat-Sen University, Guangzhou510006, China Abstract

Aluminium Induced Crystallization of Amorphous

In this paper, aluminum induced crystallization (AIC) was studied by examining the effect of using solution derived AlCl3 catalyst. Such catalyst preparation method offers possibility of low-cost, non-vacuum solution process and allows examination of the role of

Aluminum

The crystallization behavior of dc sputtered amorphous silicon on glass induced by an Al interface layer has been investigated above and below the eutectic temperature of 577 C. Secondary electron micrographs in combination with energy-dispersive x-ray microanalysis show that annealing below this temperature leads to the juxtaposed Al and Si layers exchanging places.

Polycrystalline silicon thin films on glass by aluminum

2021/3/20This work focuses on the development and characterization of device quality thin-film crystalline silicon layers directly onto low-temperature glass. The material requirements and crystallographic quality necessary for high-performance device fabrication are studied and discussed. The processing technique investigated is aluminum-induced crystallization (AIC) of sputtered amorphous silicon

Aluminum

Aluminum-induced layer exchange (ALILE) was used to crystallize amorphous silicon–germanium (a-Si 1 − x Ge x) alloys. A bilayer structure of aluminum ( Al ) and a - Si 1 − x Ge x was deposited on quartz substrates and annealed below the eutectic temperature of the binary Al – Ge alloy ( 420 C ) .

Application of rapid thermal annealing process to the

Application of rapid thermal annealing process to the aluminum induced crystallization of amorphous silicon thin film 비정질 실리콘의 부분적 알루미늄 유도 결정화 공정에서의 급속 열처리 적용 가능성 Hwang, Ji-Hyun (Department of Physics, University of Incheon) ;

Application of rapid thermal annealing process to the

In this study, polycrystalline silicon thin film useful for the solar cells was fabricated by AIC(Aluminum Induced Crystallization) process. A diffusing barrier for this process is prepared with Al2O3. For the maximization of the grain size of the polycrystalline silicon, a selective blasting of the Al2O3 diffusing barrier was conducted before annealing treatment. The heat treatment for the

Aluminium Induced Crystallization of Amorphous

In this paper, aluminum induced crystallization (AIC) was studied by examining the effect of using solution derived AlCl3 catalyst. Such catalyst preparation method offers possibility of low-cost, non-vacuum solution process and allows examination of the role of

Metal induced crystallization of amorphous silicon for

Metal induced crystallization of amorphous silicon for photovoltaic solar cells D. Van Gestel*, I. Gordon, J. Poortmans IMEC,Kapeldreef 75, B-3001 Leuven, Belgium Abstract A silicon thin-film technology could lead to less expensive modules by the use of less

Aluminum induced crystallization of amorphous silicon thin

2016/4/1The aluminum-induced crystallization of amorphous silicon (a-Si) was studied. • Annealing treatment was applied on the samples at three different temperatures. • Three different voltages were applied across the films during the annealing. • Electrical, morphological

Structural properties of a

The processing technique investigated is aluminum-induced crystallization (AIC) of sputtered amorphous silicon on Al-coated glass substrates. Electron and ion beam microscopy are employed to study the crystallization process and the structure of the continuous polycrystalline silicon layer.

Aluminum

2004/3/22Aluminum-induced crystallization of a-Si is a promising path to cheap and simple definition of a seeding layer for epitaxial growth of a large-grained active layer in thin-film polycrystalline silicon solar cells on foreign substrates. The course of the crystallization has

Direct

Direct-Aluminum-Heating-Induced Crystallization of Amorphous Silicon Thin Film 비정질 실리콘 박막의 알루미늄 직접 가열 유도 결정화 공정 Park, Ji-Young (Dept. of Mechanical Engineering, Hanyang Univ.) ; Lee, Dae-Geon (Dept. of Mechanical Engineering, Hanyang Univ.) ;

The role of H

We propose a technique to improve and accelerate aluminum-induced crystallization (AIC) by hydrogen plasma. Raman spectroscopy and secondary ion mass spectrometry of crystallized poly-silicon thin films show that hydrogen plasma radicals reduce the crystallization time of AIC. This technique shortens the annealing time from 10 to 4nbsp;h and increases the Hall mobility from 22 to

A Novel Bonding Mechanism Using AluminumUsing Aluminum

Using AluminumUsing Aluminum-Induced Crystallization of Amorphous Silicon Markus D. Ong and Reinhold H. Dauskardt Stanford University AVS TFUG Meeting June 20, 2007 MIC of Amorphous Si • Metal-induced crystallization of a-Si occurs at surprisingly

Aluminum

Polycrystalline silicon (poly-Si) thin films are fabricated by aluminum-induced crystallization (AIC) of amorphous silicon suboxide (a-SiO x, x = 0.22) at 550 C for 20 h.AIC of a-SiO 0.22 via thermal annealing of a-SiO 0.22 /Al bilayer structures leads to layer exchange with the formation of poly-Si films with (111) preferential orientation and high-crystalline quality-coated with a layer of a

Application of rapid thermal annealing process to the

In this study, polycrystalline silicon thin film useful for the solar cells was fabricated by AIC(Aluminum Induced Crystallization) process. A diffusing barrier for this process is prepared with Al2O3. For the maximization of the grain size of the polycrystalline silicon, a selective blasting of the Al2O3 diffusing barrier was conducted before annealing treatment. The heat treatment for the

On the Controlling Mechanism of Preferential Orientation of Polycrystalline

Crystallization of P Type Amorphous Silicon (a-Si: H) by AIC Method: Effect of Aluminum Thickness Faouzi Kezzoula et al-Effect of annealing time on aluminum-induced crystallization of silicon suboxide thin films Alexandr Zamchiy et al-Pole figure analysis

Metal Induced Crystallization

Metal Induced Crystallization 463 oxide interface layer, depending on the layer sequence, to allow the inter diffusion of the materials. The Si oxide layer is transformed by the Al into a mixture of Al oxide and an Al xSi phase. This newly formed Al xSi phase provides a diffusion ch annel for the Si and Al atoms

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